? 2004 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c 160 a i l terminal current limit(rms) 100 a i c90 t c = 90 c96a i cm t c = 25 c, 1 ms 400 a ssoa v ge = 15 v, t vj = 125 c, r g = 2.4 ? i cm = 200 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 416 w t j -40 ... +150 c t jm 150 c t stg -40 ... +150 c v isol 50/60 hz t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.5/13 nm/lb.in. weight 19 g features ? conforms to sot-227b outline ? isolation voltage 3000 v~ ? very high current, fast switching igbt ? low v ce(sat) - for minimum on-state conduction losses ? mos gate turn-on - drive simplicity ? low collector-to-case capacitance (< 50 pf) ? low package inductance (< 5 nh) - easy to drive and to protect applications ? ac motor speed control ? dc servo and robot drives ? dc choppers ? uninterruptible power supplies (ups) ? switch-mode and resonant-mode power supplies advantages ? easy to mount with 2 screws ? space savings ? high power density e symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1 ma , v ge = 0 v 600 v v ge(th) i c = 1 ma, v ce = v ge 2.5 5.5 v i ces v ce = v ces t j = 25 c 200 a v ge = 0 v t j = 125 c 2 ma i ges v ce = 0 v, v ge = 20 v 400 na v ce(sat) i c = 120a, v ge = 15 v 2.3 v ds98911b(09/04) hiperfast tm igbt ixge 200n60b v ces = 600 v i c25 = 160 a v ce(sat) = 2.3 v t fi = 160ns g e c c g = gate, e = emitter, c = collector c either emitter terminal can be used as main or kelvin emitter e c isoplus 227 tm (ixge)
ixys reserves the right to change limits, test conditions, and dimensions. ixge 200n60b sot-227b minibloc symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60 a; v ce = 10 v, 50 75 s pulse test, t 300 s, duty cycle 2 % c ies 11000 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 680 pf c res 190 pf q g 350 nc q ge i c = 120a, v ge = 15 v, v ce = 0.5 v ces 72 nc q gc 131 nc t d(on) 60 ns t ri 45 ns e on 2.4 mj t d(off) 200 360 ns t fi 160 280 ns e off 5.5 9.6 mj t d(on) 60 ns t ri 60 ns e on 4.8 mj t d(off) 290 ns t fi 250 ns e off 8.7 mj r thjc 0.3 k/w r thck 0.07 k/w inductive load, t j = 25 c i c = 100a, v ge = 15 v v ce = 0.8 v ces , r g = r off = 2.4 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g inductive load, t j = 125 c i c =100a, v ge = 15 v v ce = 0.8 v ces , r g = r off = 2.4 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 please see ixgn200n60b data sheet for characteristic curves.
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